TPCC8105 2010-09-03 1 toshiba field effect transistor silicon p-chann el mos type (u-mos ) TPCC8105 lithium ion battery applications power management switch applications ? small footprint due to a small and thin package ? low drain-source on-resistance: r ds (on) = 6.0 m (typ.)( v gs = ? 10 v) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement mode: v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 0.5 ma) absolute maximum ratings (t a = 25c) characteristic symbol rating unit drain-source voltage v dss ?30 v drain-gate voltage (r gs = 20 k ) v dgr ?30 v gate-source voltage v gss ?25/+20 v dc (note 1) i d ?23 drain current pulsed (note 1) i dp ?69 a drain power dissipation (t c = 25c) p d 30 w drain power dissipation (t = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 0.7 w single-pulse avalanche energy (note 3) e as 138 mj avalanche current i ar ?23 a channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. using continuously under heavy lo ads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-3x1a weight: 0.02 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3 :source 4:gate 5,6,7,8:drain
TPCC8105 2010-09-03 2 thermal characteristics marking note 1: ensure that the channel temperature does not exceed 150c. note 2 a: device mounted on a glass-epoxy board (a) note 2b: device mounted on a glass-epoxy board (b) note 3: v dd = ? 24 v, t ch = 25c (initial), l = 200 h, r g = 1 , i ar = ? 23 a characteristic symbol max unit thermal resistance, channel to case (t c = 25c) r th(ch-c) 4.16 c/w thermal resistance, channel to ambient (t = 10 s) (note 2a) r th(ch-a) 65.7 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th(ch-a) 178 c/w (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) part number 8105 lot no. product-specific code
TPCC8105 2010-09-03 3 electrical characteristics (t a = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cutoff current i dss v ds = ?30 v, v gs = 0 v ? ? ?10 a v (br)dss i d = ?10 ma, v gs = 0 v ? 30 ? ? drain-source breakdown voltage v (br)dsx i d = ?10 ma, v gs = 10 v (note 4) ?21 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ?0.5 ma ?0.8 ? ? 2.0 v v gs = ?4 .5v, i d = ? 11.5 a ? 8 10.4 drain-source on-resistance r ds(on) v gs = ?10 v, i d = ?11.5 a ? 6 7.8 m input capacitance c iss ? 3240 ? reverse transfer capacitance c rss ? 520 ? output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz ? 580 ? pf rise time t r ? 8 ? turn-on time t on ? 14 ? fall time t f ? 110 ? switching time turn-off time t off duty 1%, t w = 10 s ? 330 ? ns total gate charge (gate-source plus gate-drain) q g ? 76 ? gate-source charge 1 q gs1 ? 7.6 ? gate-drain (?miller?) charge q gd v dd ?24 v, v gs = ? 10 v, i d = ? 23 a ? 20 ? nc source-drain ratings and characteristics (t a = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 69 a forward voltage (diode) v dsf i dr = ?23 a, v gs = 0 v ? ? 1.2 v note 4: v dsx mode (the application of a plus voltage between ga te and source) may cause decrease in maximum rating of drain-source voltage. r l = 1.3 v dd ?15 v ?10 v v gs 0 v 4.7 i d = ?11.5 a v out
TPCC8105 2010-09-03 4 0 0 ? 1 ? 2 ? 3 t a = ? 55c 25 100 ? 40 ? 4 ? 20 ? 60 ? 20 ? 12 ? 8 0 ? 16 ? 4 v gs = ? 2 v ? 3.5 ? 3 ? 10 ? 4.5 ? 2 ? 50 ? 40 ? 20 ? 10 0 0 ? 0.8 v gs = ? 2 v ? 1.6 ? 1.2 ? 0.4 ? 2.2 ? 4.5 ? 2.2 ? 3 ? 2.4 ? 6 ? 6 ? 10 ? 2.6 ? 2.4 ? 3.5 ? 2.6 ? 30 ? 1 0 ? 0.4 ? 0.8 ? 0.6 ? 0.2 0 ? 0.4 0 i d = ? 23 a ? 4 ? 8 ? 16 ? 5.8 ? 11.5 ? 0.3 ? 20 1 ? 0.1 ? 10 10 ? 100 ? 10 v gs = ? 4.5 v ? 1 ? 0.5 ? 12 ? 0.2 ? 0.1 i d ? v ds i d ? v ds drain-source voltage v ds (v) drain current i d (a) drain current i d (a) r ds(on) ? i d drain-source on-resistance r ds(on) (m ) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs common source t a = 25c pulse test common source v ds = ? 10 v pulse test common source t a = 25c pulse test common source t a = 25c pulse test common source t a = 25c pulse test
TPCC8105 2010-09-03 5 ? 10 ? 20 0 0 120 ? 6 v ds v dd ? 24 v ? 12 40 ? 10 0 ? 20 ? 30 ? 30 80 v gs 0 ? 0.1 0.2 ? 100 0.6 0.8 v gs = 0 v ? 10 ? 4.5 ? 3 0.4 ? 10 100 ? 0.1 1000 10000 ? 1 ? 10 ? 100 c iss c oss c rss 0 ? 0.4 ? 1.2 ? 80 ? 40 0 40 80 120 160 ? 2 160 ? 40 0 40 80 120 ? 80 5 0 v gs = ? 10 v v gs = ? 4.5 v ? 0.8 ? 1.6 15 10 ? 1 1.0 ? 1 drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature t a (c) v th ? t a ambient temperature t a (c) r ds(on) ? t a drain-source on-resistance r ds(on) (m ) total gate charge q g (nc) drain-source voltage v ds (v) dynamic input/output characteristics gate-source voltage v gs (v) common source t a = 25c pulse test common source v gs = 0 v f = 1 mhz t a = 25c common source v ds = ? 10 v i d = ? 0.5 ma pulse test common source pulse test common source i d = ? 23 a t a = 25c pulse test i d = ? 5.8, ? 11.5, ? 23 a i d = ? 5.8, ? 11.5, ? 23 a
TPCC8105 2010-09-03 6 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 (2) (1) (3) 0.01 t = 1 ms* v dss max t = 10 ms* ? 100 ? 0.1 ? 10 ? 1 ? 1 ? 100 ? 0.1 0.1 0.0001 ? 10 transient thermal impedance r th (c/w) pulse width t w (s) r th ? t w (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) (3) t c = 25c single - pulse drain current i d (a) drain-source voltage v ds (v) safe operating area i d max (pulse) * * single-pulse t a = 25c curves must be derated linearly with increase in temperature. case temperature t c (c) p d ? t c drain power dissipation p d (w) ambient temperature t a (c) p d ? t a drain power dissipation p d (w) 2.0 0 1.5 2.5 1.0 0.5 0 40 80 120 160 (1) (2) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t = 10 s 30 20 10 0 0 40 80 120 160 40
TPCC8105 2010-09-03 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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